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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package DARLINGTON High DC current gain Complement to type MJ2500/2501 APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION MJ3000/3001 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER Collector-base voltage VCEO INC Collector-emitter voltage E SEM ANG H MJ3000 MJ3001 MJ3000 Open base MJ3001 Open emitter OND IC CONDITIONS TOR UC VALUE 60 80 60 UNIT V V 80 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Open collector 5 10 0.2 V A A W ae ae TC=25ae 150 200 -55~200 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER MJ3000 V(BR)CEO Collector-emitter breakdown voltage MJ3001 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage MJ3000 ICER Collector cut-off current MJ3001 MJ3000 ICEO Collector cut-off current IC=5A; IB=20mA IC=10A; IB=50mA IC=5A ; VCE=3V VCE=60V; RBE=1.0k| TC=150ae VCE=80V; RBE=1.0k| TC=150ae VCE=30V; IB=0 VCE=40V; IB=0 VEB=5V; IC=0 IC=0.1A ;IB=0 80 CONDITIONS MIN 60 MJ3000/3001 SYMBOL TYP. MAX UNIT V 2.0 4.0 3.0 1.0 5.0 V V V mA 1.0 5.0 IEBO hFE Emitter cut-off current DC current gain MJ3001 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.17 UNIT ae /W CHA IN E SEM NG OND IC TOR UC 1.0 2.0 mA mA IC=5A ; VCE=3V 1000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ3000/3001 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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